RS6P100BHTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 100V 100A, HSOP8, POWER MOSF
$3.37
Available to order
Reference Price (USD)
1+
$3.37000
500+
$3.3363
1000+
$3.3026
1500+
$3.2689
2000+
$3.2352
2500+
$3.2015
Exquisite packaging
Discount
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Upgrade your designs with the RS6P100BHTB1 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RS6P100BHTB1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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