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SCT1000N170

STMicroelectronics
SCT1000N170 Preview
STMicroelectronics
HIP247 IN LINE
$15.09
Available to order
Reference Price (USD)
1+
$15.09000
500+
$14.9391
1000+
$14.7882
1500+
$14.6373
2000+
$14.4864
2500+
$14.3355
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
  • Vgs (Max): +22V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3

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