SCT1000N170
STMicroelectronics
STMicroelectronics
HIP247 IN LINE
$15.09
Available to order
Reference Price (USD)
1+
$15.09000
500+
$14.9391
1000+
$14.7882
1500+
$14.6373
2000+
$14.4864
2500+
$14.3355
Exquisite packaging
Discount
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Optimize your power electronics with the SCT1000N170 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SCT1000N170 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3