SCT2450KEHRC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 10A, THD, SILICON-CARBIDE
$12.61
Available to order
Reference Price (USD)
1+
$12.61000
500+
$12.4839
1000+
$12.3578
1500+
$12.2317
2000+
$12.1056
2500+
$11.9795
Exquisite packaging
Discount
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The SCT2450KEHRC11 by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SCT2450KEHRC11 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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