SCT2H12NZGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1700V 3.7A TO3PFM
$7.85
Available to order
Reference Price (USD)
1+
$5.95000
10+
$5.37500
30+
$5.12500
120+
$4.45000
270+
$4.25000
510+
$3.87500
1,020+
$3.50000
Exquisite packaging
Discount
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The SCT2H12NZGC11 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's SCT2H12NZGC11 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PFM
- Package / Case: TO-3PFM, SC-93-3
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