SI1427EDH-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 2A SC70-6
$0.45
Available to order
Reference Price (USD)
3,000+
$0.13405
6,000+
$0.12635
15,000+
$0.11865
30,000+
$0.10941
75,000+
$0.10556
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SI1427EDH-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SI1427EDH-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
IXYS
IXFH14N85X
Infineon Technologies
IPB049NE7N3GATMA1
Infineon Technologies
IPP50R380CEXKSA1
Vishay Siliconix
SI3407DV-T1-GE3
IXYS
IXFH20N85X
Infineon Technologies
SPP15N65C3XKSA1
Diodes Incorporated
DMN5L06K-7
Nexperia USA Inc.
NX138BKHH
Infineon Technologies
IAUT165N08S5N029ATMA2
Panjit International Inc.