SCT3030AW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 70A TO263-7
$41.47
Available to order
Reference Price (USD)
1+
$41.47000
500+
$41.0553
1000+
$40.6406
1500+
$40.2259
2000+
$39.8112
2500+
$39.3965
Exquisite packaging
Discount
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Optimize your power electronics with the SCT3030AW7TL single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SCT3030AW7TL combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 267W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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