SCT30N120
STMicroelectronics
STMicroelectronics
SICFET N-CH 1200V 40A HIP247
$25.69
Available to order
Reference Price (USD)
1+
$32.15000
30+
$28.63400
120+
$25.88183
Exquisite packaging
Discount
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The SCT30N120 by STMicroelectronics is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SCT30N120 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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