SPA07N60C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-FP
$3.12
Available to order
Reference Price (USD)
1+
$2.41000
10+
$2.17200
100+
$1.74560
500+
$1.35770
1,000+
$1.12495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SPA07N60C3XKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SPA07N60C3XKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
Related Products
STMicroelectronics
STB11NK40ZT4
Infineon Technologies
IRF1010EPBF
Nexperia USA Inc.
PSMN2R4-30MLDX
Infineon Technologies
IPW65R280E6FKSA1
Microchip Technology
APT22F120L
Vishay Siliconix
TP0610K-T1-GE3
Vishay Siliconix
SIB452DK-T1-GE3
NXP USA Inc.
BUK9E3R2-40E,127
Infineon Technologies
IPW65R075CFD7AXKSA1
STMicroelectronics