IPU95R2K0P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 950V 4A TO251-3
$1.64
Available to order
Reference Price (USD)
1+
$1.39000
10+
$1.23400
100+
$0.98870
500+
$0.78136
1,000+
$0.63057
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IPU95R2K0P7AKMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPU95R2K0P7AKMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Alpha & Omega Semiconductor Inc.
AOB414
Panjit International Inc.
PJP4NA65_T0_00001
Infineon Technologies
SPA07N60C3XKSA1
STMicroelectronics
STB11NK40ZT4
Infineon Technologies
IRF1010EPBF
Nexperia USA Inc.
PSMN2R4-30MLDX
Infineon Technologies
IPW65R280E6FKSA1
Microchip Technology
APT22F120L
Vishay Siliconix
TP0610K-T1-GE3
Vishay Siliconix