SIR4608LDP-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
$1.29
Available to order
Reference Price (USD)
1+
$1.29000
500+
$1.2771
1000+
$1.2642
1500+
$1.2513
2000+
$1.2384
2500+
$1.2255
Exquisite packaging
Discount
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Enhance your electronic projects with the SIR4608LDP-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIR4608LDP-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 43.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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