IKZ50N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 50A CO-PACK TO-247-4
$7.43
Available to order
Reference Price (USD)
1+
$7.51000
10+
$6.84000
240+
$5.75450
720+
$5.07956
1,200+
$4.49263
Exquisite packaging
Discount
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Optimize your power systems with the IKZ50N65EH5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IKZ50N65EH5XKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 273 W
- Switching Energy: 410µJ (on), 190µJ (off)
- Input Type: Standard
- Gate Charge: 109 nC
- Td (on/off) @ 25°C: 20ns/250ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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