FGH30N6S2
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$0.95
Available to order
Reference Price (USD)
1+
$0.95000
500+
$0.9405
1000+
$0.931
1500+
$0.9215
2000+
$0.912
2500+
$0.9025
Exquisite packaging
Discount
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The FGH30N6S2 Single IGBT transistor by Fairchild Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGH30N6S2 ensures precise power control and long-term stability. With Fairchild Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGH30N6S2 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 108 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
- Power - Max: 167 W
- Switching Energy: 55µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 23 nC
- Td (on/off) @ 25°C: 6ns/40ns
- Test Condition: 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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