SGL50N60RUFDTU
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Available to order
Reference Price (USD)
1+
$8.18000
10+
$7.42400
375+
$5.92968
750+
$5.43160
1,125+
$4.76747
Exquisite packaging
Discount
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Upgrade your power management systems with the SGL50N60RUFDTU Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the SGL50N60RUFDTU provides reliable and efficient operation. Fairchild Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose SGL50N60RUFDTU for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 1.68mJ (on), 1.03mJ (off)
- Input Type: Standard
- Gate Charge: 145 nC
- Td (on/off) @ 25°C: 26ns/66ns
- Test Condition: 300V, 50A, 5.9Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: HPM F2
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