SI1012X-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 500MA SC89-3
$0.47
Available to order
Reference Price (USD)
3,000+
$0.14520
6,000+
$0.13640
15,000+
$0.12760
30,000+
$0.11704
75,000+
$0.11264
Exquisite packaging
Discount
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The SI1012X-T1-GE3 single MOSFET from Vishay Siliconix is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SI1012X-T1-GE3 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
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