TSM70N600CH C5G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 700V 8A TO251
$5.62
Available to order
Reference Price (USD)
1+
$1.75000
10+
$1.57600
100+
$1.26680
500+
$0.98526
1,875+
$0.81635
3,750+
$0.78820
Exquisite packaging
Discount
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Meet the TSM70N600CH C5G by Taiwan Semiconductor Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TSM70N600CH C5G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Taiwan Semiconductor Corporation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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