SI1031X-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 155MA SC75A
$0.00
Available to order
Reference Price (USD)
3,000+
$0.18755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI1031X-T1-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI1031X-T1-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75, SOT-416
Related Products
onsemi
NTD24N06G
Infineon Technologies
SP001385054
Renesas Electronics America Inc
2SK3481-AZ
Infineon Technologies
IRF7807VD2TRPBF
IXYS
IXTA27N20T
Infineon Technologies
IRF3709L
Infineon Technologies
IPD65R250E6XTMA1
Vishay Siliconix
IRL3502L
IXYS
IXTQ102N15T
Vishay General Semiconductor - Diodes Division