Shopping cart

Subtotal: $0.00

SI2303CDS-T1-BE3

Vishay Siliconix
SI2303CDS-T1-BE3 Preview
Vishay Siliconix
MOSFET P-CH 30V 1.9A/2.7A SOT23
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Infineon Technologies

IPD80R280P7ATMA1

Diodes Incorporated

DMN3052LSS-13

Infineon Technologies

IPB020N10N5ATMA1

Infineon Technologies

IRF7842TRPBF

Diodes Incorporated

DMT64M8LSS-13

Nexperia USA Inc.

PSMN4R2-60PLQ

Infineon Technologies

IRFB7734PBF

STMicroelectronics

STW23N80K5

Vishay Siliconix

SI2367DS-T1-BE3

Rohm Semiconductor

R6020KNJTL

Top