SI4413CDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 8-SOIC
$0.96
Available to order
Reference Price (USD)
2,500+
$0.91930
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI4413CDY-T1-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI4413CDY-T1-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IRFB4019PBF
IXYS
IXTQ42N25P
Vishay Siliconix
SIE808DF-T1-GE3
Rohm Semiconductor
R6030ENZ4C13
onsemi
FDD7N20TM
Nexperia USA Inc.
BUK7M8R0-40EX
Renesas Electronics America Inc
2SJ586CPTL-E
Infineon Technologies
BSS223PWH6327XTSA1
IXYS
IXFA16N50P-TRL
Inventchip