SI4456DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 33A 8SO
$1.48
Available to order
Reference Price (USD)
2,500+
$1.33650
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SI4456DY-T1-GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SI4456DY-T1-GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IPD053N06NATMA1
Texas Instruments
CSD19503KCS
Infineon Technologies
BG5120KE6327
IXYS
IXTT440N055T2
Alpha & Omega Semiconductor Inc.
AOW66616
onsemi
NTR4003NT3G
Rectron USA
RM2301
Micro Commercial Co
MCB130N10Y-TP
Diodes Incorporated
DMNH10H028SCT
Linear Integrated Systems, Inc.