SI5449DC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 3.1A 1206-8
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The SI5449DC-T1-GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI5449DC-T1-GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET™
- Package / Case: 8-SMD, Flat Lead
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