PMN49EN,135
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 4.6A 6TSOP
$0.11
Available to order
Reference Price (USD)
1+
$0.11000
500+
$0.1089
1000+
$0.1078
1500+
$0.1067
2000+
$0.1056
2500+
$0.1045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMN49EN,135 by NXP USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose NXP USA Inc. for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-74
- Package / Case: SC-74, SOT-457
Related Products
onsemi
NTC040N120SC1
IXYS
IXFT30N50P
onsemi
FCPF250N65S3R0L-F154
Diodes Incorporated
DMN3730U-7
Infineon Technologies
IRLR2905TRLPBF
GeneSiC Semiconductor
G3R12MT12K
Rohm Semiconductor
RT1A060APTR
Vishay Siliconix
SQM60030E_GE3
Diodes Incorporated
DMP6185SK3-13
onsemi