SIDR392DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET
$1.82
Available to order
Reference Price (USD)
1+
$1.82000
500+
$1.8018
1000+
$1.7836
1500+
$1.7654
2000+
$1.7472
2500+
$1.729
Exquisite packaging
Discount
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Meet the SIDR392DP-T1-RE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SIDR392DP-T1-RE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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