SIR5802DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 80 V (D-S) MOSFET POWE
$1.98
Available to order
Reference Price (USD)
1+
$1.98000
500+
$1.9602
1000+
$1.9404
1500+
$1.9206
2000+
$1.9008
2500+
$1.881
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SIR5802DP-T1-RE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SIR5802DP-T1-RE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 33.6A (Ta), 137.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
FDP86363-F085
onsemi
NTBS2D7N06M7
Toshiba Semiconductor and Storage
SSM3J15F,LF
IXYS
IXTP2N100
Rohm Semiconductor
RRQ030P03HZGTR
Nexperia USA Inc.
PMPB215ENEAX
STMicroelectronics
STI150N10F7
STMicroelectronics
STH290N4F6-2AG
Infineon Technologies
IPB029N06N3GE8187ATMA1
Infineon Technologies