SIS4608LDN-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
$0.99
Available to order
Reference Price (USD)
1+
$0.99000
500+
$0.9801
1000+
$0.9702
1500+
$0.9603
2000+
$0.9504
2500+
$0.9405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIS4608LDN-T1-GE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SIS4608LDN-T1-GE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 36.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
onsemi
2SK2169-AZ
Diodes Incorporated
DMN63D1LT-7
IXYS
IXTH2N150
Alpha & Omega Semiconductor Inc.
AOTL66810
Renesas Electronics America Inc
2SK1580(0)-T1-A
IXYS
FMD21-05QC
Infineon Technologies
AUIRFC8407TR
onsemi
NVMYS029N08LHTWG
IXYS
IXFQ8N85X
Renesas Electronics America Inc