SMUN5114DW1T1G
onsemi
onsemi
TRANS 2PNP PREBIAS 0.187W SOT363
$0.41
Available to order
Reference Price (USD)
3,000+
$0.10593
6,000+
$0.10031
15,000+
$0.09189
30,000+
$0.08627
75,000+
$0.07972
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing onsemi's SMUN5114DW1T1G, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. onsemi's dedication to excellence ensures that the SMUN5114DW1T1G meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
onsemi
MUN5137DW1T1
Rohm Semiconductor
UMH2NTN
Diodes Incorporated
DDA123JU-7
Nexperia USA Inc.
PBLS4004Y,115
onsemi
NSVUMC2NT1G
onsemi
NSVMUN5211DW1T3G
Toshiba Semiconductor and Storage
RN2704,LF
Toshiba Semiconductor and Storage
RN2905FE,LXHF(CT
Toshiba Semiconductor and Storage
RN2908FE(TE85L,F)
Toshiba Semiconductor and Storage