SNXH80T120L2Q0P2G
onsemi
onsemi
IC MODULE PIM 1200V 80A
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onsemi's SNXH80T120L2Q0P2G represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the SNXH80T120L2Q0P2G in industrial servo drives or medium-voltage frequency converters. Trust onsemi's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 67 A
- Power - Max: 158 W
- Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 80A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 19.4 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
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