SPD50N03S2L06GBTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 50A TO252-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SPD50N03S2L06GBTMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SPD50N03S2L06GBTMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Microchip Technology
APT4M120K
Vishay Siliconix
SI4823DY-T1-E3
Toshiba Semiconductor and Storage
SSM3J108TU(TE85L)
STMicroelectronics
STD12NF06-1
Diodes Incorporated
DMN2112SN-7
Renesas Electronics America Inc
RJJ0315DPA-00#J5A
Diodes Incorporated
ZVP4105ASTOA
Vishay Siliconix
SIR436DP-T1-GE3
onsemi
NTDV3055L104T4G
onsemi