SQD23N06-31L_T4GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 23A TO252AA
$0.48
Available to order
Reference Price (USD)
1+
$0.47916
500+
$0.4743684
1000+
$0.4695768
1500+
$0.4647852
2000+
$0.4599936
2500+
$0.455202
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SQD23N06-31L_T4GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SQD23N06-31L_T4GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NVTYS014P04M8LTWG
Renesas
NP80N055MHE-S18-AY
Microchip Technology
APTM100SK33T1G
onsemi
2SJ632-M-TD-E
Infineon Technologies
IPTG025N10NM5ATMA1
IXYS
IXTP120N20X4
onsemi
FCPF600N60ZL1-F154
Renesas Electronics America Inc
2SK3230B-T1-A
Renesas Electronics America Inc
2SK1583-AZ
Fairchild Semiconductor