SS9018HBU-FS
Fairchild Semiconductor

Fairchild Semiconductor
RF 0.05A, VERY HIGH FREQUENCY BA
$0.02
Available to order
Reference Price (USD)
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$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
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Discover the SS9018HBU-FS, a premium RF Bipolar Junction Transistor (BJT) by Fairchild Semiconductor, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The SS9018HBU-FS boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Fairchild Semiconductor for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 28 @ 1mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3