SSM3J66MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 800MA VESM
$0.07
Available to order
Reference Price (USD)
1+
$0.06732
500+
$0.0666468
1000+
$0.0659736
1500+
$0.0653004
2000+
$0.0646272
2500+
$0.063954
Exquisite packaging
Discount
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Upgrade your designs with the SSM3J66MFV,L3F by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SSM3J66MFV,L3F is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
- Vgs (Max): +6V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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