SSM3K336R,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 3A SOT23F
$0.45
Available to order
Reference Price (USD)
3,000+
$0.09000
6,000+
$0.08500
15,000+
$0.07750
30,000+
$0.07250
75,000+
$0.07000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SSM3K336R,LF single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's SSM3K336R,LF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
Related Products
Infineon Technologies
IPD90N06S404ATMA2
Fairchild Semiconductor
FDD6676
Renesas Electronics America Inc
RJK0358DSP-00#J0
Taiwan Semiconductor Corporation
TSM150P03PQ33 RGG
Vishay Siliconix
SIE812DF-T1-E3
Vishay Siliconix
SIHU5N80AE-GE3
Infineon Technologies
BSC070N10NS3GATMA1
Infineon Technologies
IRLI3705NPBF
Texas Instruments
CSD18502KCS
Texas Instruments