TSM150P03PQ33 RGG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET P-CH 30V 36A 8PDFN
$0.78
Available to order
Reference Price (USD)
5,000+
$0.19010
10,000+
$0.18354
Exquisite packaging
Discount
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Meet the TSM150P03PQ33 RGG by Taiwan Semiconductor Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TSM150P03PQ33 RGG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Taiwan Semiconductor Corporation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 27.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3.1x3.1)
- Package / Case: 8-PowerWDFN
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