STGP30H60DFB
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
$3.39
Available to order
Reference Price (USD)
1+
$3.24000
50+
$2.64600
100+
$2.39850
500+
$1.90350
1,000+
$1.60650
2,500+
$1.50750
5,000+
$1.45800
Exquisite packaging
Discount
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Upgrade your power management systems with the STGP30H60DFB Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGP30H60DFB provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGP30H60DFB for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 383µJ (on), 293µJ (off)
- Input Type: Standard
- Gate Charge: 149 nC
- Td (on/off) @ 25°C: 37ns/146ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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