RJP65T43DPM-00#T1
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$4.44
Available to order
Reference Price (USD)
1+
$4.44000
500+
$4.3956
1000+
$4.3512
1500+
$4.3068
2000+
$4.2624
2500+
$4.218
Exquisite packaging
Discount
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Enhance your electronic projects with the RJP65T43DPM-00#T1 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RJP65T43DPM-00#T1 ensures precision and reliability. Renesas Electronics America Inc's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RJP65T43DPM-00#T1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 68.8 W
- Switching Energy: 170µJ (on), 110µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 30ns/107ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3PFM