Shopping cart

Subtotal: $0.00

TK17A80W,S4X

Toshiba Semiconductor and Storage
TK17A80W,S4X Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 17A TO220SIS
$4.02
Available to order
Reference Price (USD)
1+
$3.86000
50+
$3.10500
100+
$2.82900
500+
$2.29080
1,000+
$1.93200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 850µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack

Related Products

Vishay Siliconix

SIHG32N50D-E3

Taiwan Semiconductor Corporation

TSM018NB03CR RLG

Infineon Technologies

BSS139H6327XTSA1

Infineon Technologies

BSC0402NSATMA1

Infineon Technologies

IPP80N04S2H4AKSA2

Fairchild Semiconductor

HUF76437S3S

Infineon Technologies

IPD60R210CFD7ATMA1

Infineon Technologies

IRF9335TRPBF

Vishay Siliconix

SQ4050EY-T1_GE3

Nexperia USA Inc.

PSMN017-80PS,127

Top