TK70D06J1(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 70A TO220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the TK70D06J1(Q) by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TK70D06J1(Q) stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220(W)
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SI5415EDU-T1-GE3
Fairchild Semiconductor
IRFI624BTUFP001
IXYS
IXTU05N100
Alpha & Omega Semiconductor Inc.
AO4409
onsemi
FQB6N90TM_AM002
Infineon Technologies
IRF7834PBF
Fairchild Semiconductor
FQB20N06LTM
Vishay Siliconix
SI6443DQ-T1-E3
Infineon Technologies
IRLR6225PBF
Infineon Technologies