TW030N120C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 30MO
$36.09
Available to order
Reference Price (USD)
1+
$36.09000
500+
$35.7291
1000+
$35.3682
1500+
$35.0073
2000+
$34.6464
2500+
$34.2855
Exquisite packaging
Discount
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The TW030N120C,S1F from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's TW030N120C,S1F for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
- Vgs(th) (Max) @ Id: 5V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 249W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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