UF3SC120016K3S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 107A TO247-3
$53.01
Available to order
Reference Price (USD)
1+
$53.01000
500+
$52.4799
1000+
$51.9498
1500+
$51.4197
2000+
$50.8896
2500+
$50.3595
Exquisite packaging
Discount
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Enhance your electronic projects with the UF3SC120016K3S single MOSFET from UnitedSiC. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust UnitedSiC's UF3SC120016K3S for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 517W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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