UPA1919TE-T1-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 20V SC-95
$0.17
Available to order
Reference Price (USD)
1+
$0.16963
500+
$0.1679337
1000+
$0.1662374
1500+
$0.1645411
2000+
$0.1628448
2500+
$0.1611485
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the UPA1919TE-T1-AT single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's UPA1919TE-T1-AT for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SC-95-6, Mini Mold Thin
- Package / Case: SC-95-6
Related Products
Goford Semiconductor
G09P02L
onsemi
NVMFWS025P04M8LT1G
Infineon Technologies
IPL60R095CFD7AUMA1
Alpha & Omega Semiconductor Inc.
AOW296
Infineon Technologies
SPP11N60S5XKSA1
Harris Corporation
HUF76139S3
Goford Semiconductor
G01N20LE
Diodes Incorporated
DMT6030LFCL-7
Diodes Incorporated
DMN10H220LFDF-13
IXYS