UPA2730TP-E2-AZ
Renesas
Renesas
UPA2730 - POWER FIELD-EFFECT TRA
$0.91
Available to order
Reference Price (USD)
1+
$0.90957
500+
$0.9004743
1000+
$0.8913786
1500+
$0.8822829
2000+
$0.8731872
2500+
$0.8640915
Exquisite packaging
Discount
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The UPA2730TP-E2-AZ from Renesas redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the UPA2730TP-E2-AZ offers the precision and reliability you need. Trust Renesas to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 40W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
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