VS-40MT120PHAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MTP - HALF BRIDGE IGBT
$63.77
Available to order
Reference Price (USD)
1+
$63.77000
500+
$63.1323
1000+
$62.4946
1500+
$61.8569
2000+
$61.2192
2500+
$60.5815
Exquisite packaging
Discount
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The VS-40MT120PHAPBF from Vishay General Semiconductor - Diodes Division is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the VS-40MT120PHAPBF is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Vishay General Semiconductor - Diodes Division's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 305 W
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 40A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 12-MTP Module
- Supplier Device Package: 12-MTP
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