VS-ETL015Y120H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 22A 89W EMIPAK-2B
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Reference Price (USD)
56+
$72.09000
Exquisite packaging
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Engineered for excellence, the VS-ETL015Y120H IGBT module by Vishay General Semiconductor - Diodes Division sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The VS-ETL015Y120H finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Vishay General Semiconductor - Diodes Division continues to lead the IGBT module revolution with innovations like the VS-ETL015Y120H.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 22 A
- Power - Max: 89 W
- Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
- Current - Collector Cutoff (Max): 75 µA
- Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK-2B
- Supplier Device Package: EMIPAK-2B
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