VS-ETY020P120F
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD OUTPUT & SW EMIPAK 2B
$179.85
Available to order
Reference Price (USD)
60+
$144.97000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-ETY020P120F IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-ETY020P120F offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-ETY020P120F in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-ETY020P120F IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
APTGL40X120T3G
Infineon Technologies
IFS75B12N3E4B31BOSA1
Infineon Technologies
FP150R07N3E4BOSA1
Microchip Technology
APTGT300SK170G
Microchip Technology
APTCV50H60T3G
Infineon Technologies
FP10R12W1T7PB3BPSA1
Infineon Technologies
FF450R12ME4EB11BPSA2
Infineon Technologies
FD16001200R17KF6CB2NOSA1
Infineon Technologies
DF225R12W2H3FB11BPSA1
Infineon Technologies