FP10R12W1T7PB3BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY
$22.24
Available to order
Reference Price (USD)
1+
$22.23538
500+
$22.0130262
1000+
$21.7906724
1500+
$21.5683186
2000+
$21.3459648
2500+
$21.123611
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FP10R12W1T7PB3BPSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FP10R12W1T7PB3BPSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FP10R12W1T7PB3BPSA1.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
FF450R12ME4EB11BPSA2
Infineon Technologies
FD16001200R17KF6CB2NOSA1
Infineon Technologies
DF225R12W2H3FB11BPSA1
Infineon Technologies
FF150R17KE4HOSA1
Infineon Technologies
FP35R12KT4BPSA1
Infineon Technologies
BSM400GA170DLS
Fairchild Semiconductor
FMM7G50US60I
Infineon Technologies
BSM10GD120DN2E3224BOSA1
Infineon Technologies
F4100R06KL4BOSA1
Infineon Technologies