VS-GA250SA60S
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 400A 961W SOT227
$0.00
Available to order
Reference Price (USD)
1+
$78.75000
10+
$74.81300
30+
$72.84367
100+
$67.42980
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-GA250SA60S by Vishay General Semiconductor - Diodes Division redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the VS-GA250SA60S in high-efficiency servo controllers for manufacturing automation. Vishay General Semiconductor - Diodes Division combines innovation with quality in every VS-GA250SA60S module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 400 A
- Power - Max: 961 W
- Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 200A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4
- Supplier Device Package: SOT-227
Related Products
Littelfuse Inc.
MG1250H-XN2MM
Microchip Technology
APT60GT60JR
Vishay General Semiconductor - Diodes Division
CPV362M4K
IXYS
IXSN50N60BD2
Vishay General Semiconductor - Diodes Division
VS-GB50LA120UX
Microchip Technology
APT60GF60JU3
IXYS
IXEN60N120D1
Microchip Technology
APT100GT60JRDQ4
SemiQ
GSID150A120T2C1
SemiQ