GSID200A170S3B1
SemiQ
SemiQ
IGBT MODULE 1200V 400A 1630W D3
$0.00
Available to order
Reference Price (USD)
4+
$141.46750
Exquisite packaging
Discount
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The GSID200A170S3B1 by SemiQ redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the GSID200A170S3B1 in high-efficiency servo controllers for manufacturing automation. SemiQ combines innovation with quality in every GSID200A170S3B1 module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 400 A
- Power - Max: 1630 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: D-3 Module
- Supplier Device Package: D3
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