CPV362M4K
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 5.7A 23W IMS-2
$0.00
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Reference Price (USD)
160+
$33.35000
Exquisite packaging
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The CPV362M4K from Vishay General Semiconductor - Diodes Division exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the CPV362M4K in megawatt-level wind turbine converters. With Vishay General Semiconductor - Diodes Division's proven track record, the CPV362M4K represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 5.7 A
- Power - Max: 23 W
- Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 3A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 450 pF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2
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