VS-GB100LH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 200A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$279.44250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-GB100LH120N by Vishay General Semiconductor - Diodes Division redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the VS-GB100LH120N in high-efficiency servo controllers for manufacturing automation. Vishay General Semiconductor - Diodes Division combines innovation with quality in every VS-GB100LH120N module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 833 W
- Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 100A (Typ)
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 8.96 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
Related Products
Powerex Inc.
CM75DU-24F
Infineon Technologies
IFS100V12PT4BOSA1
Vishay General Semiconductor - Diodes Division
VS-GB75TP120N
IXYS
MWI225-17E9
Infineon Technologies
IRG5K75HF06A
Powerex Inc.
CM400HA-28H
Infineon Technologies
BYM300A160DN13CHOSA1
onsemi
FMS6G15US60S
IXYS
VIO75-06P1
Microsemi Corporation