VS-GB100YG120NT
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 127A ECONO3 4PACK
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Vishay General Semiconductor - Diodes Division's VS-GB100YG120NT stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the VS-GB100YG120NT enables higher power density in MRI gradient amplifiers. Choose Vishay General Semiconductor - Diodes Division for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 127 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 100A
- Current - Collector Cutoff (Max): 80 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ECONO3 4PACK
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Vishay General Semiconductor - Diodes Division
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