15GN03CA-TB-E
onsemi
onsemi
RF TRANS NPN 10V 1.5GHZ 3CP
$0.43
Available to order
Reference Price (USD)
3,000+
$0.08589
6,000+
$0.07730
15,000+
$0.06871
30,000+
$0.06442
75,000+
$0.05726
Exquisite packaging
Discount
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The 15GN03CA-TB-E from onsemi is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the 15GN03CA-TB-E is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust onsemi for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 1.5GHz
- Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
- Gain: 13dB @ 0.4GHz
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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